![]() ![]() Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the orientation. All AlN films exhibited a preferred orientation and compressive residual stresses. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. ![]() No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). ![]() Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.Ĭ-axis orientated AlN films deposited using deep oscillation magnetron sputtering Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. The particle size of the IZO films were increase as doping content increases from 2% to 5%. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The IZO thin films revealed hexagonal wurtzite structure. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The Indium content in ZnO was varied systematically and the structural parameters were studied. ![]() Doping induced c-axis oriented growth of transparent ZnO thin filmĬ-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. ![]()
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